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1, pp. 1 29, January 1994. Khan Mohiuddin Ali, Edwin Rossow and S. P. Shah, Shear Design of High Strength Concrete Beams, Structures Congress, American Society of Civil Engineers/Structural Engineering Institute, Philadelphia, PA, 2000. Khan, Mohiuddin Ali and H. Nassef, American Society of Civil Engineers seminar, Philadelphia Section, Trenton, NJ, 2005. Khan, Mohiuddin Ali and M. ElGaaly, New Jersey Department of Transportation seminar, Trenton, NJ, 2001. LRFD Speci cations for the Design of Bridges, American Association of State Highway and Transportation Of cials, 1998, Washington, DC. Rehm, Kelley C., The Future of Bridge Design, States Implement Load and Resistance Factor Design Speci cations to Meet an October Deadline, American Society of Civil Engineers, Journal of Bridge Engineering, January/February 2007. Strut & Tie Modeling of Disturbed Regions, Prestressed Concrete Institute Bridge Design Manual, 8.
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2 2 RL VL 1 RL = V2 = V2 2 s RL R L (RT + R L ) (RT + R L )2 s
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Table C-5. Program Neighborhood Agent File and Directory Structure (Continued )
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Low-pressure spraying (ACI RAP-3). Vertical and overhead spall repair by hand application (ACI RAP-6). Horizontal concrete surfaces (ACI RAP-7). Preplaced aggregate method (ACI RAP-9).
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2. The first time you access a particular list of values, the possible list of values screen may be empty. Click Refresh Values to launch the list of values query. 3. For each of the prompts, select the prompt from the top of the dialog, and then select the desired values. For example, position your mouse on Select Product Line(s), labeled 1 in the preceding illustration. 4. In the possible values list, select an additional filter criterion, such as Sweaters, labeled 2.
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of entry of the inferior epigastric artery into the rectus sheath What is the ischial spine and what is its significance It is the medial protrusion of the ischium and an important landmark for giving a pudendal nerve block. It also provides a good landmark by which to assess progression of fetal descent during labor Gynecoid (50%); anthropoid (25 50%); android (16 33%); platypelloid (3%) It is wider and lower than the male pelvis. The pubic arch is wide and round, the iliac bone is flatter, and the ischial spines are not prominent. The anterior-posterior and transverse diameters are roughly equal. All of this makes the pelvic basin more spacious It is heart-shaped with a wider anterior-posterior diameter than a transverse diameter It is narrower and taller than the gynecoid pelvis It has a wider transverse diameter than an anterior-posterior diameter The superior circumference of the lesser pelvis. Its boundaries include the sacral promontory, the pubic ramus and symphysis pubis, and the linea terminalis
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int width; int area; // this declares another variable // this is a third variable
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2. Use partial fractions to evaluate each of the following inde nite integrals. dx (x + 2)(x 5) dx (b) (x + 1)(x 2 + 1) dx (c) x 3 2x 2 5x + 6 x dx (d) x4 1 dx (e) 3 x 2 8x + 12 x x+1 (f) 3 x2 + x 1 x 3. Use the method of u-substitution to evaluate each of the following inde nite integrals. (a) (a) (b) (c) (d) (e) (f) (1 + sin2 x)2 2 sin x cos x dx sin x dx x cos(ln x) sin(ln x) dx x etan x sec2 x dx sin x dx 1 + cos2 x
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per year for every year in perpetuity, where t is time measured in years (here the present corresponds to time t = 0). Assume a constant interest rate of 4%. What is the total value, in today's dollars, of all the money that will ever be earned by your trust account
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In surface micromachining, thin lms are deposited on a thick substrate wafer and etched using photolithographic masks to de ne patterns in the deposited layers. By alternating deposition and etching, several layers of different materials can be stacked to create intricate microstructures. Since lithography requires at surfaces and the thickness of an individual layer is limited to a few microns compared to the size of the wafers (usually 2, 3, 4, 6, 8, and 12 inches in diameter), MEMS devices are generally very at structures. In this sandwich construction, some sacri cial layers are included so that they can be dissolved at the end to create releasable (i.e., movable) mechanical structures. Figure 15.1 illustrates the surface micromachining process with a single sacri cial layer and a single movable structural layer. Multilayered structures with alternating structural and sacri cial layers can be obtained in a similar manner. MUMPs, Multi-User MEMS Processes, which were successfully made available as a foundry process for MEMS by the Microelectronic Center of North Carolina, is an example of a multilayered surface micromachining process. SUMMiT, Sandia Ultra-planar Multi-level MEMS Technology,* process is another example. While MUMPs consisted of three structural layers, SUMMiT consists of four or ve with added steps of planarization in between. Many of the devices described in Sec. 5 of this chapter are made using the SUMMiT process. In contrast to surface micromachining, in bulk micromachining a bulk wafer whose thickness is of the order of a few hundred microns is sculpted using etching techniques to de ne the structures. Bulk micromachining also uses deposition and etching of thin lms, but the primary feature creation is due to the substantial etching of the substrate wafer. When etched through large depths, the distinction between isotropic and anisotropic etches becomes important. Some chemicals etch certain materials equally in all directions and are called isotropic etchants for those materials, while others have different etch rates in different directions and create anisotropically etched surfaces. Both isotropic and anisotropic etches are effectively used in MEMS devices depending on the desired geometry. Since the substrate wafer is etched to a large depth, bulk micromachined MEMS devices tend to be much (about 10 times) thicker than the surface micromachined structures. A sample bulk micromachining technique is illustrated in Fig. 15.2. One disadvantage with traditional bulk etching of silicon in building very thick microstructures (up to a few hundred microns) is the lack of vertical sidewalls of etched surfaces. While isotropic etches lead to curved sidewalls, some anisotropic etches lead to slanted surfaces, and both are undesirable in many applications. The shape of the lithographic mask and the shape of the etched pit as viewed from the top of the wafer are also
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query. This is particularly true for complex queries or queries that you know may be better run scheduled rather than in real time. To do so, click Edit Report to go to the formatted report view and then select Save.
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VT1.5 Each VT1.5 frame consists of 27 bytes, structured as 3 columns of 9 bytes each. At a frame rate of 8000 Hz, these bytes provide a transport capacity of 1.728 Mbps and will accommodate the mapping of a 1.544 Mbps DS1 signal. Twenty-eight VT1.5s can be multiplexed into the STS-1 SPE. VT2 Each VT2 frame consists of 36 bytes, structured as 4 columns of 9 bytes. At a frame rate of 8000 Hz, these bytes provide a transport capacity of 2.304 Mbps and will accommodate the mapping of a CEPT 2.048 Mbps signal. Twenty-one VT2s can be multiplexed into the STS-1 SPE. VT3 Each VT3 frame consists of 54 bytes, structured as 6 columns of 9 bytes. At a frame rate of 8000 Hz, these bytes provide a transport capacity of 3.456 Mbps and will accommodate the mapping of a DS1C signal. Fourteen VT3s can be multiplexed into the STS-1 SPE. VT6 Each VT6 frame consists of 108 bytes, structured as 12 columns of 9 bytes. At a frame rate of 8000 Hz, these bytes provide a transport capacity of 6.912 Mbps and will accommodate the mapping of a DS2 signal. Seven VT6s can be multiplexed into the STS-1 SPE.
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